Semiconductor light emitting device and method for manufacturing the same

摘要

A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.

主权项

1. A semiconductor light emitting device, comprising:
a protective element including:
a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer, andfirst and second lower electrodes connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively; and a light emitting structure including:
a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element; andfirst and second upper electrodes connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively, wherein the first and second upper and lower conductivity-type semiconductor layers are nitride semiconductor layers.