发明名称 |
Method of fabricating nonpolar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same |
摘要 |
A method of fabricating a nonpolar gallium nitride-based semiconductor layer is provided. The method is a method of fabricating a nonpolar gallium nitride layer using metal organic chemical vapor deposition, and includes disposing a gallium nitride substrate with an m-plane growth surface within a chamber, raising a substrate temperature to a GaN growth temperature by heating the substrate, and growing a gallium nitride layer on the gallium nitride substrate by supplying a Ga source gas, an N source gas, and an ambient gas into the chamber at the growth temperature. The supplied ambient gas contains N2 and does not contain H2. |
申请公布号 |
US9076896(B2) |
申请公布日期 |
2015.07.07 |
申请号 |
US201313848352 |
申请日期 |
2013.03.21 |
申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
Choi Seung Kyu;Kim Chae Hon;Jung Jung Whan |
分类号 |
H01L21/28;H01L21/3205;H01L21/4763;H01L29/15;H01L31/0256;H01L33/00;H01L33/32;H01L33/12;H01L33/16 |
主分类号 |
H01L21/28 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A method of fabricating a nonpolar gallium nitride layer using metal organic chemical vapor deposition, the method comprising:
disposing a gallium nitride substrate with an m-plane growth surface within a chamber; raising a substrate temperature to a GaN growth temperature by heating the substrate; and growing a gallium nitride layer on the gallium nitride substrate by supplying a Ga source gas, an N source gas, and an ambient gas into the chamber at the growth temperature, wherein the supplied ambient gas contains N2 and does not contain H2. |
地址 |
Ansan-si KR |