| 发明名称 | Semiconductor device and method for manufacturing the same | ||
| 摘要 | One embodiment of the present invention is a material which is suitable for a semiconductor included in a transistor, a diode, or the like. One embodiment of the present invention is an oxide material represented as InM1XM2(1-X)ZnYOZ (0<X<1, 0<Y<1, and Z<1), where M1 is an element belonging to Group 13 and preferably Ga, and M2 is an element belonging to Group 4 or 14. Typically, the content of M2 is arranged to be greater than or equal to 1 atomic % and less than 50 atomic % of that of M1. Generation of oxygen vacancies can be suppressed in an oxide semiconductor material having the above composition. It is also possible to further improve reliability of a transistor with the oxide semiconductor material with the above composition by compensating oxygen vacancies with excessive oxygen. | ||
| 申请公布号 | US9076871(B2) | 申请公布日期 | 2015.07.07 |
| 申请号 | US201213677658 | 申请日期 | 2012.11.15 |
| 申请人 | Semiconductor Energy Laboratory Co., Ltd. | 发明人 | Yamazaki Shunpei;Matsubayashi Daisuke |
| 分类号 | H01L29/10;H01L29/786 | 主分类号 | H01L29/10 |
| 代理机构 | Robinson Intellectual Property Law Office, P.C. | 代理人 | Robinson Eric J.;Robinson Intellectual Property Law Office, P.C. |
| 主权项 | 1. A semiconductor device comprising: a gate electrode layer; a gate insulating layer overlapping with the gate electrode layer; and an oxide semiconductor layer overlapping with the gate electrode layer with the gate insulating layer positioned therebetween, the oxide semiconductor layer comprising a channel formation region; wherein the oxide semiconductor layer includes copper having a concentration lower than or equal to 1×1017 atoms/cm3, wherein the oxide semiconductor layer includes aluminum having a concentration lower than or equal to 1×1018 atoms/cm3, wherein the oxide semiconductor layer includes chlorine having a concentration lower than or equal to 2×1018 atoms/cm3, wherein the channel formation region comprises an oxide material represented as InM1xM2(1-x)ZnyOz(0<X<1, 0<Y<1, and Z>1), wherein M1 is an element belonging to Group 13, wherein M2 is an element belonging to Group 4 or Group 14, and wherein a content of M2 is greater than or equal to 1 atomic % and less than 50 atomic % of a content of M1. | ||
| 地址 | Atsugi-shi, Kanagawa-ken JP | ||