Semiconductor device having a high frequency external connection electrode positioned within a via hole

摘要

A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.

主权项

1. A semiconductor device comprising:
a substrate; a via hole that penetrates through the substrate; a second semiconductor element that is mounted on one side of the substrate; a first electrode that faces the one side of the substrate and is connected to the via hole, the first electrode provided on a surface of the second semiconductor element; a first semiconductor element that is stacked above the second semiconductor element; a second electrode that is provided on the other side of the substrate and electrically connects to the first electrode with the via hole; wherein the first electrode is positioned on a periphery of the second semiconductor element in a plan view; the first electrode has a first center axis; the via hole has a second center axis that is located at a position different from the first center axis in a plan view; a diameter of the via hole is larger than a diameter of the first electrode; and the first semiconductor element and the second semiconductor element are integrally sealed by molded resin.