Semiconductor memory device and refresh method thereof

摘要

A semiconductor memory device and a self-refresh method of the semiconductor memory device. The semiconductor memory device includes: a memory cell array including one or more memory cells; a sense amplifier connected to a sensing line and a complementary sensing line and sensing/amplifying data stored in the one or more memory cells; and a sense amplifier control circuit sequentially supplying a first voltage and a second voltage having different levels to the sense amplifier through the sensing line during a refresh operation.

主权项

1. A semiconductor memory device comprising:
a memory cell array including a plurality of memory cells; a sense amplifier connected to a sensing line and a complementary sensing line and configured to sense and amplify data stored in at least one of the memory cells; and a sense amplifier control circuit configured to supply a first voltage and sequentially supply a second voltage having a different level from a level of the first voltage to the sense amplifier through the sensing line during a refresh command period of a refresh period, wherein the refresh period comprises a first refresh period and subsequently a second refresh period longer than the first refresh period.