MAGNETIC TUNNEL JUNCTION DEVICE

摘要

Provided is a magnetic tunnel junction device capable of reducing the lattice distortion of MnGa and MgO. The present invention relates to the magnetic tunnel junction device which includes a first magnetic layer which has an easy magnetization axis which is vertical to a surface, a first non-magnetic layer which is formed on the first magnetic layer, and a second magnetic layer which has an easy magnetization axis which is vertical to the surface of the first non-magnetic layer. At least one of the first magnetic layer and the second magnetic layer is made of MnGa and includes an interface layer which is made of a Heusler alloy on the lateral surface in contact with the first non-magnetic layer. A lattice constant of the interface layer in a bulk state in parallel to the surface of the interface layer is between a lattice constant of the bulk state in parallel to the surface of the first non-magnetic layer and a lattice constant of the bulk state in parallel to at least one surface of the first magnetic layer and the second magnetic layer. The magnetization directions of at least one of the first magnetic layer and the second magnetic layer and the interface layer are varied by a current flowing in the first magnetic layer, the first non-magnetic layer, the second magnetic layer, and the interface layer.