Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction

摘要

An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15

主权项

1. An optoelectronic device, comprising:
one or more semi-polar III-Nitride layers epitaxially grown on a semi-polar crystal plane of GaN, the semi-polar crystal plane having a smoothness and oriented x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15≦x≦−1 and 1≦x≦15 degrees; and one or more of the semi-polar III-Nitride layers having one or more critical thicknesses, one or more compositions, and indium incorporation; wherein:
the optoelectronic device emits light having a peak intensity at wavelength of at least 444.7 nanometers, andthe one or more critical thicknesses are larger as compared to one or more critical thicknesses of one or more semi-polar III-Nitride layers, having the one or more compositions, deposited on a {11-22} semi-polar crystal plane of GaN.