Method for fabricating mesa sidewall with spin coated dielectric material and semiconductor element thereof

摘要

A method for fabricating a mesa sidewall with a spin coated dielectric material and a semiconductor element fabricated by the same are provided in the present invention. The method includes the steps of: disposing an object on a semiconductor substrate; performing a spin coating process to coat with a liquid dielectric material; performing a drying process to dry the liquid dielectric material; performing a first etching process to remove an upper part of the dried dielectric material to expose a metal part (unaffected by ion bombardment) of the object; performing a deposition process to insulate the metal part (unaffected by ion bombardment) of the object; and performing a second etching process to form a semiconductor element with a mesa sidewall.

主权项

1. A method for fabricating a mesa sidewall with a spin coated dielectric material, comprising:
disposing an object having a wide-top-narrow-bottom structure on a semiconductor substrate; performing a spin coating process to coat with a liquid dielectric material; performing a drying process to render the liquid dielectric material a dried dielectric material; performing an etching process to form a semiconductor element with a mesa sidewall, wherein the object is a heterojunction bipolar transistor (HBT) and comprises: the semiconductor substrate, comprising a stress buffer layer, sub-collector and a collector; a base mesa, disposed over the semiconductor substrate; an emitter mesa, disposed over the base mesa; an emitter metal, disposed over the emitter mesa, wherein a width of the emitter metal is larger than a width of the emitter mesa; a base metal, disposed over the base mesa and at one side of the emitter mesa, wherein a thickness of the base metal is smaller than a thickness of the emitter mesa and a first predetermined fixed distance exists between the base metal and the emitter mesa.