Flash memory device using adaptive program verification scheme and related method of operation

摘要

A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.

主权项

1. A method of programming a nonvolatile memory device, comprising:
applying a program voltage to selected memory cells; performing a first verification operation for a first program state by applying a first verification voltage to the selected memory cells; performing a second verification operation for a second program state by applying a second verification voltage to the selected memory cells; performing a first fail-bit counting operation for a result of the first verification operation; and selectively performing a second fail-bit counting operation for a result of the second verification operation based on a result of the first fail-bit counting operation, wherein the second verification voltage is higher than the first verification voltage.