Method for programming a nonvolatile memory device

摘要

Provided is a method for programming a nonvolatile memory device, which includes memory cells arranged in a plurality of rows. The programming method includes alternately selecting word lines to program data at a first page portion and a second page portion associated with the memory cells. After the first and second page portions are programmed, the method includes programming data at a third page portion associated with the memory cells according to an order in which word lines are arranged. The word lines may be sequentially selected one by one from a word line adjacent to a ground selection line.

主权项

1. A method for programming a nonvolatile memory unit, the nonvolatile memory unit including multi-level memory cells associated with a plurality of word lines, the method comprising:
selecting, in an alternate order, the word lines to program first data at a first page portion and a second page portion associated with the selected word lines; programming, according to the alternate order, the first data at the first and second page portions associated with the selected word lines; selecting, in a sequential order, the word lines to program second data at a third page portion associated with the selected word lines; and programming, according to the sequential order, the second data at the third page portion associated with the selected word lines.