发明名称 Detecting chip alterations with light emission
摘要 An emission map of a circuit to be tested for alterations is obtained by measuring the physical circuit to be tested. An emission map of a reference circuit is obtained by measuring a physical reference circuit or by simulating the emissions expected from the reference circuit. The emission map of the circuit to be tested is compared with the emission map of the reference circuit, to determine presence of alterations in the circuit to be tested, as compared to the reference circuit.
申请公布号 US9075106(B2) 申请公布日期 2015.07.07
申请号 US200912512168 申请日期 2009.07.30
申请人 International Business Machines Corporation 发明人 Bernstein Kerry;Culp James;Heidel David F.;Pfeiffer Dirk;Polson Anthony D.;Song Peilin;Stellari Franco;Wisnieff Robert L.
分类号 G06K9/00;G01R31/311;G01R31/00 主分类号 G06K9/00
代理机构 Ryan, Mason & Lewis, LLP 代理人 Dougherty Anne V.;Ryan, Mason & Lewis, LLP
主权项 1. A method comprising: obtaining a light emission map of a circuit to be tested for alterations; obtaining a light emission map of a reference circuit; and comparing an image of said light emission map of said circuit to be tested with an image of said light emission map of said reference circuit, to determine presence of said alterations; wherein said comparing step comprises at least one of performing image processing to subtract the image of said light emission map of said circuit to be tested from the image of said light emission map of said reference circuit, performing image processing to differentiate the image of said light emission map of said circuit to be tested from the image of said light emission map of said reference circuit, and performing image processing to apply a two-dimensional correlation function to correlate the image of said light emission map of said circuit to be tested and the image of said light emission map of said reference circuit; wherein said light emission map of said reference circuit is obtained by simulation; wherein said simulation comprises: calculating a leakage current for each of a plurality of devices of said reference circuit, based on a layout database and a state vector; dividing said reference circuit into a plurality of sub-Nyquist tiles; summing said leakage current for each of said devices in each given one of said sub-Nyquist tiles to obtain a resultant grid; and oversampling said resultant grid, wherein said oversampling comprises convolving an oversampling window with said sub-Nyquist tiles to provide smoothing; and wherein said step of obtaining said light emission map of said circuit to be tested, said step of obtaining said light emission map of said reference circuit, and said step of comparing are performed by one or more hardware devices including a memory and at least one processor, coupled to said memory.
地址 Armonk NY US