发明名称 |
Method and means for coupling high-frequency energy to and/or from the nanoscale junction of an electrically-conductive tip with a semiconductor |
摘要 |
A method for coupling high-frequency energy, in particular for microwave circuits, to a nanoscale junction involves placing a bias-T outside of the tip and sample circuits of a scanning probe microscope and connecting a portion of a sample of analyzed semi-conductor through an outer shielding layer of coaxial cable so as to complete a circuit with minimal involvement of the sample. The bias-T branches into high and low-frequency circuits, both of which are completed and, at least the high-frequency circuit, does not rely on grounding of implements or other structure to accomplish said completion. |
申请公布号 |
US9075081(B2) |
申请公布日期 |
2015.07.07 |
申请号 |
US201414223727 |
申请日期 |
2014.03.24 |
申请人 |
|
发明人 |
Hagmann Mark J. |
分类号 |
G01Q30/20;G01Q60/16;G01Q60/10;G01Q60/00 |
主分类号 |
G01Q30/20 |
代理机构 |
Dobbin IP Law P.C. |
代理人 |
Dobbin IP Law P.C. ;Dobbin Geoffrey E. |
主权项 |
1. A method of coupling at least one electrical apparatus to a nanoscale junction by means of a transmission line with at least two electrical conductors, the junction comprising an electrically conductive tip electrode and a sample, the method comprising:
a. coupling a bias-T to one end of the transmission line and coupling at least one apparatus to the bias-T; b. coupling another end of the transmission line to the nanoscale junction, such that the tip electrode is coupled to one of the at least two conductors of the transmission line; and c. connecting the sample to another of the at least two conductors of the transmission line; wherein, no other apparatus is connected to the nanoscale junction except through the bias-T. |
地址 |
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