发明名称 |
SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM |
摘要 |
The present invention prevents the operation of a turbo molecular pump installed in an exhaust system from being unstable. A substrate processing device capable of processing a substrate by supplying gas to a processing space comprises: a buffer space to disperse the gas at an upper side of the processing space; a returning space through which the substrate passes when the substrate is returned to the processing space; a first exhaust pipe connected to the returning space; a second exhaust pipe connected to the buffer space; a third exhaust pipe connected to the processing space; a fourth exhaust pipe connected to each lower side of the first, second, and third exhaust pipes; a first vacuum pump installed in the first exhaust pipe; a second vacuum pump installed in the fourth exhaust pipe; a first value installed on the lower side of the first vacuum pump; a second valve installed in the second exhaust pipe; and a third valve installed in the third exhaust pipe. |
申请公布号 |
KR20150077250(A) |
申请公布日期 |
2015.07.07 |
申请号 |
KR20140021953 |
申请日期 |
2014.02.25 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
ASHIHARA HIROSHI;OGAWA ARITO |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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