发明名称 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
摘要 The present invention prevents the operation of a turbo molecular pump installed in an exhaust system from being unstable. A substrate processing device capable of processing a substrate by supplying gas to a processing space comprises: a buffer space to disperse the gas at an upper side of the processing space; a returning space through which the substrate passes when the substrate is returned to the processing space; a first exhaust pipe connected to the returning space; a second exhaust pipe connected to the buffer space; a third exhaust pipe connected to the processing space; a fourth exhaust pipe connected to each lower side of the first, second, and third exhaust pipes; a first vacuum pump installed in the first exhaust pipe; a second vacuum pump installed in the fourth exhaust pipe; a first value installed on the lower side of the first vacuum pump; a second valve installed in the second exhaust pipe; and a third valve installed in the third exhaust pipe.
申请公布号 KR20150077250(A) 申请公布日期 2015.07.07
申请号 KR20140021953 申请日期 2014.02.25
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 ASHIHARA HIROSHI;OGAWA ARITO
分类号 H01L21/02 主分类号 H01L21/02
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