SEMICONDUCTOR DEVICE AND METHOD MANUFACTURING THE SAME

摘要

According to an embodiment of the present invention, a semiconductor device comprises: a first n^- type epi-layer arranged on a first surface of an n^+ type silicon carbide substrate; a p-type epi-layer arranged on the first n^- type epi-layer; a second n^- type epi-layer arranged on the p-type epi-layer; an n^+ area arranged on the second n^- type epi-layer; a trench penetrating the second n^- type epi-layer, the p-type epi-layer, and the n^+ area and arranged on the first n^- type epi-layer; a p^+ area arranged on the p-type epi-layer and spaced apart from the trench; a gate insulation film positioned in the trench; a gate electrode positioned on the gate insulation film; an oxide film positioned on the gate electrode; a source electrode positioned on the n^+ area, the oxide film, the p^+ area; and a drain electrode positioned on a second surface of the n^+ type silicon carbide substrate. Channels are arranged on the second n^- type epi-layers on both sides of the trench and the p-type epi-layers on both sides of the trench.