发明名称 |
METHOD FOR FORMING STACKED GRAPHENE PATTERN |
摘要 |
The present invention relates to a method for forming a graphene stacked pattern comprising: forming a metal thin film pattern on a base; forming a graphene pattern on the base by evaporating the metal thin film pattern and depositing on a graphene layer on the metal thin film pattern at the same time; and forming a stacked pattern of graphene by alternately forming the metal thin film pattern and depositing the graphene layer on the metal thin film pattern. The present invention has an effect of forming a graphene pattern in the desired shape by stacking graphene at the desired thickness in a desired part on a base. |
申请公布号 |
KR20150077343(A) |
申请公布日期 |
2015.07.07 |
申请号 |
KR20140187725 |
申请日期 |
2014.12.24 |
申请人 |
INDUSTRY-ACADEMIA COOPERATION GROUP OF SEJONG UNIVERSITY |
发明人 |
JUNG, JONG WAN;PARK, JAE HYUN |
分类号 |
H01B13/00;C01B31/04 |
主分类号 |
H01B13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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