MANUFACTURING METHOD OF THIN FILM TRANSISTOR ARRAY SUBSTRATE

摘要

The present invention relates to a method for manufacturing a thin film transistor array substrate capable of increasing reliability. The method for manufacturing a thin film transistor array substrate includes: a step of forming, on a gate insulation film, multiple layers including at least one first metal layer and a second metal layer formed of copper (Cu); a step of forming, on the multiple layers, a first mask area corresponding to a data line and a second mask area corresponding to an electrode pattern overlapped on an active layer; a step of forming the data line formed of the multiple layers by patterning the multiple layers; a step of forming the first make area at a third height lower than the first height by ashing the first mask layer; a step of forming an electrode pattern formed of at least one first metal layer by patterning the second metal layer; a step of forming, on the gate insulation film, the second mask layer covering the data line and a remaining portion except for a channel area of the active layer of the electrode pattern; and a step of forming a drain electrode and a source which are spaced apart from each other with respect to the channel area of the active layer and are formed of at least one metal layer by patterning the least one first metal layer in a state in which the second mask layer is formed.