| 发明名称 | Method of producing at least one optoelectronic semiconductor chip | ||
| 摘要 | A method of producing at least one optoelectronic semiconductor chip includes providing at least one optoelectronic structure, including a growth support and a semiconductor layer sequence with an active region, the semiconductor layer sequence being deposited epitaxially on the growth support, providing a carrier, applying the at least one optoelectronic structure onto the carrier with its side remote from the growth support, coating the at least one optoelectronic structure with a protective material, the protective material covering the outer face, remote from the carrier, of the growth support and side faces of the growth support and of the semiconductor layer sequence, and detaching the growth support from the semiconductor layer sequence of the at least one optoelectronic structure. | ||
| 申请公布号 | US9076941(B2) | 申请公布日期 | 2015.07.07 |
| 申请号 | US201214004442 | 申请日期 | 2012.03.12 |
| 申请人 | OSRAM Opto Semiconductors GmbH | 发明人 | Herrmann Siegfried;Illek Stefan |
| 分类号 | H01L33/60;H01L33/62;H01L33/58;H01L33/44;H01L23/00;H01L33/00;H01L33/22;H01L33/38;H01L33/46;H01S5/02;H01S5/022;H01S5/323 | 主分类号 | H01L33/60 |
| 代理机构 | DLA Piper LLP (US) | 代理人 | DLA Piper LLP (US) |
| 主权项 | 1. A method of producing at least one optoelectronic semiconductor chip comprising: providing at least one optoelectronic structure, comprising a growth support and a semiconductor layer sequence with an active region, the semiconductor layer sequence being deposited epitaxially on the growth support, providing a carrier, applying the at least one optoelectronic structure onto the carrier with its side remote from the growth support, coating the at least one optoelectronic structure with a conformal layer of a protective material, the conformal layer of the protective material covering an outer face, remote from the carrier, of the growth support and side faces of the growth support and of the semiconductor layer sequence, and detaching the growth support from the semiconductor layer sequence of the at least one optoelectronic structure. | ||
| 地址 | DE | ||