Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

摘要

Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

主权项

1. A monolithic, quadruple junction solar cell, comprising:
a first cell comprising Ge with a bandgap of about 0.67 eV; a second cell comprising GaAs that is isoelectronically co-doped with a Group III acceptor element and a Group V donor element, to have a bandgap of about 1.05 eV on the first cell, wherein the Group III acceptor element is B and the Group V donor element is Bi to form a GaAs:Bi:B crystal lattice; a third cell comprising GaAs with a bandgap of about 1.42 eV on the second cell; and a fourth cell comprising InGaP with a bandgap of about 1.90 eV on the third cell.