The present disclosure relates to a power semiconductor device which includes a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type which is formed on the upper side of the first semiconductor layer, and a heat radiation trench which passes through the upper side of the second semiconductor layer to a part of the second semiconductor layer and includes an insulation layer on a surface thereof.
申请公布号
KR20150076715(A)
申请公布日期
2015.07.07
申请号
KR20130165240
申请日期
2013.12.27
申请人
SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人
PARK, JAE HOON;YOON, SUN JAE;JANG, CHANG SU;UM, KEE JU;SONG, IN HYUK