METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

In a method for manufacturing a semiconductor device, the present invention: forms a device separation film pattern on a substrate; defines a field region covered with the device separation film pattern and the first and second active regions which are not covered with the device separation film pattern and project to the upper part from the device separation film pattern; forms a first reflection protection film on the device separation pattern; forms first photoresist films on the first and second active regions on the substrate and the first reflection protection film; forms a first photoresist pattern covering the first active region by partially etching the first photoresist film; and forms a first impurity region by injecting ions into the second active region.