发明名称 METHOD OF LIFTING SINGLE CRYSTAL
摘要 <p>PROBLEM TO BE SOLVED: To reduce variance in quality of a single crystal which is lifted by adjusting the center position of a horizontal magnetic field according to the quantity of a perpendicular position shift of a thermal shield body.SOLUTION: There is provided a method of lifting a single crystal while a raw material put in a crucible 13 of a CZ furnace 10 is heated by a heater 19 into a melt 16 and while the melt is applied with a horizontal magnetic field, the single crystal 11 lifted from the melt has its outer peripheral surface enclosed with a thermal shield body 46. An initial position of the thermal shield body is measured before the single crystal is lifted for a first time in the CZ furnace while the melt in the crucible is heated by the heater, the center position 33 of the horizontal magnetic field is set to the setting position based upon the initial position, and the quantity of a shift of the thermal shield body from the initial position is measured before or during lifting of the single crystal for second and successive times in the CZ furnace while the melt in the crucible is heated by the heater, so that the center position 33 of the horizontal magnetic field is adjusted based upon the quantity of the shift.</p>
申请公布号 JP2015124127(A) 申请公布日期 2015.07.06
申请号 JP20130270641 申请日期 2013.12.27
申请人 SUMCO CORP 发明人 NAKAMURA TAKESHI;YOTSUI TAKUYA
分类号 C30B15/22;C30B30/04 主分类号 C30B15/22
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