发明名称 |
INPUT BUFFER FOR SEMICONDUCTOR MEMORY DEVICE, FLASH MEMORY DEVICE INCLUDING INPUT BUFFER |
摘要 |
Disclosed are an input buffer and a flash memory device including the input buffer. The input buffer or a buffer of the flash memory device according to an embodiment of the present invention comprises: an amplifying unit for outputting an amplification signal by amplifying an inputted input signal based on a bias voltage set at a first level corresponding to a power source voltage and a standard voltage; an output unit for outputting an output signal by receiving and buffering the amplification signal; and a dynamic bias voltage generating unit for changing the bias voltage into a second level by responding to a transition of the output signal. |
申请公布号 |
KR20150075721(A) |
申请公布日期 |
2015.07.06 |
申请号 |
KR20130163949 |
申请日期 |
2013.12.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, KYOUNG TAE |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|