发明名称 INPUT BUFFER FOR SEMICONDUCTOR MEMORY DEVICE, FLASH MEMORY DEVICE INCLUDING INPUT BUFFER
摘要 Disclosed are an input buffer and a flash memory device including the input buffer. The input buffer or a buffer of the flash memory device according to an embodiment of the present invention comprises: an amplifying unit for outputting an amplification signal by amplifying an inputted input signal based on a bias voltage set at a first level corresponding to a power source voltage and a standard voltage; an output unit for outputting an output signal by receiving and buffering the amplification signal; and a dynamic bias voltage generating unit for changing the bias voltage into a second level by responding to a transition of the output signal.
申请公布号 KR20150075721(A) 申请公布日期 2015.07.06
申请号 KR20130163949 申请日期 2013.12.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, KYOUNG TAE
分类号 G11C16/06 主分类号 G11C16/06
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