| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem in which: in bonding a semiconductor thin film light-emitting element on a metal layer with high heat dissipation by using a direct intermolecular force, there is proposed a structure using an AuGeNi alloy layer as a bonding surface, and when chemically stable Pt is used as a barrier metal to prevent the eutectic crystallization with Ti that is used as an adhesion improvement layer, wet etching is made difficult and it has been difficult to avoid damage during dicing.SOLUTION: A semiconductor light-emitting element includes bonding substrates (102, 103, and 104), a bonding metal 107 formed on a formation substrate 102, and a semiconductor thin film light-emitting element 108 having a plurality of light-emitting parts and bonded on the bonding metal 107, where the bonding metal 107 forms an outermost layer with an AuGeNi layer 106, forms an adhesion improvement layer with the formation substrate 102 with an Ni layer 105, and arranges the light-emitting parts in a one-dimensional or two-dimensional manner. |
