SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element capable of easily improving performance such as Vsd and a manufacturing method of the same.SOLUTION: The manufacturing method of the semiconductor element includes forming a low concentration diffusion layer 5 at a lower part of an insulator film 9 continued from a diffusion layer 4 immediately under a source electrode 6, thus, a depletion layer may be expanded and performance such as Vsd may be easily improved without increasing diffusion mask processes without changing wafer specifications.