| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film capacitor in which the breakdown voltage performance can be maintained over a long term.SOLUTION: A thin film capacitor 1 includes a lower electrode 2, a dielectric layer 3 provided on the lower electrode and including a defect, and an upper electrode formed on the dielectric layer. On the interface of the defect 5 region of the dielectric layer and the upper electrode, an insulator structure 6 is formed of a resin material. The insulator structure is formed to come into contact with the upper electrode, and has a structure forming a cavity 7 on the defect of the dielectric layer. The defect and the upper electrode are spaced apart reliably by the insulator structure and cavity, and the long term breakdown voltage characteristics of the thin film capacitor 1 are enhanced.</p> |
