| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of suppressing a variation in a height of an insulation region corresponding to a formation position in forming an insulation region for each recessed part on a surface of a substrate.SOLUTION: A method for forming an insulation region includes the steps of: applying a solution of a silicon based insulation material on a substrate having a recessed part on a surface thereof; drying a solution of the insulation material applied on the substrate; after the dry of a solution of the insulation material, supplying an etchant to the substrate to remove an excess of the insulation material; and after the removal of the excess of the insulation material, forming an insulator containing silicon oxide, in the recessed part by firing the insulation material left on the substrate. |
