| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition device for forming a film on a processing object with conductivity such as a steel material, by which plasma deposition processing is stabilized by reducing possibility of abnormal discharge.SOLUTION: The device includes: a microwave supplying section for supplying microwave for creating plasma; a negative voltage applying section for applying a negative bias voltage which expands a sheath layer along a processing surface; a microwave supplying aperture 22 for propagating the microwave to the expanded sheath layer; and a central conductor 21C of a wave guide arranged in the microwave supplying aperture 22 opposite to a recess part in a depth direction of the recess part formed in the microwave supplying aperture 22, and which transmits the microwave supplied from the micro wave supplying section. In the depth direction of the recess part, an area S1 of a first surface of the central conductor 21C, and an area S2 of a second surface of a jig 9 for supporting a processing object material 8, the area S1 and the area S2 facing each other, satisfy the following relation. (S1/S2)=(100/9) |
