LOW CAPACITY SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce the capacity of a semiconductor element, even when the element capacity is reduced by contracting the area of a low capacity PN diode, by suppressing increase in parasitic capacity due to a surface electrode.SOLUTION: Even when the element capacity is reduced by contracting the area of a low capacity PN diode 221, a film thickness of an oxide film 210 just under a surface electrode 214 is made thick and an increase in parasitic capacity due to the surface electrode 214 is suppressed, thereby capable of reducing the capacity of a semiconductor element.