| 摘要 |
<p>The present invention aims to provide a composition for forming a underlying layer which can properly form a phase separation structure by self-organization and can form a rectangular pattern. In a self-organization lithography method, the composition forms the underlying layer arranged between a layer containing silicon atoms and a self-organization layer. The composition includes a compound having a group, capable of reacting with Si-OH or Si-H, and a solvent. A receding contact angle between the underlying layer and pure water is 70-90°. The compound is preferably represented by Chemical formula (1). (In Chemical formula (1), A is a (m+n)-valent linking group; D is a monovalent organic group having 10 or more carbon atoms; E is a group capable of reacting with Si-OH or Si-H; m and n are independently integers of 1-200.).</p> |
