| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation method of a contact layer capable of forming a contact layer without being affected by a base substrate.SOLUTION: When forming a contact layer 114 on a substrate 110 having a contact hole 112 for taking a contact between the substrate 110 and an implantation metal, the substrate 110 is arranged in a chamber, and Ti raw material gas, reduction gas and Si raw material gas are introduced, and they are changed into plasma to deposit a TiSix film 113 on the substrate 110, and a bottom part of the contact hole 112 of the TiSix film 113 is used as the contact layer 114. |
