| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology capable of suppressing high-temperature heat from being transferred to a connection part around a semiconductor element.SOLUTION: A semiconductor device 1 comprises a semiconductor substrate 10 on which a semiconductor element in which carriers flow in a lengthwise direction is formed. The semiconductor substrate 10 comprises: a thick plate region 2; and a thin plate region 3 adjacent to the thick plate region 2, and having a thickness in the lengthwise direction thinner than that of the thick plate region 2. A step is formed between an upper surface 21 of the thick plate region 2 and an upper surface 31 of the thin plate region 3. The semiconductor element is formed on the semiconductor substrate 10 above the upper surface 31 of the thin plate region 3. A first terminal 11 is connected with the upper surface 21 of the thick plate region 2. A second terminal 12 is connected with the upper surface 31 of the thin plate region 3. |
