| 摘要 |
PROBLEM TO BE SOLVED: To increase a yield of a photoelectric conversion device including a waveguide.SOLUTION: A photoelectric conversion device includes: a substrate including a photoelectric conversion element; and a waveguide which includes an insulator having an opening that is disposed corresponding to the photoelectric conversion element and containing silicon oxide and a member located in the opening and containing silicon nitride. A method for manufacturing the photoelectric conversion device includes: a first step of forming a first silicon nitride film serving as the member, in the opening using a parallel plate plasma CVD apparatus; and a second step of forming a second silicon nitride film serving as the member, in the opening and on the first silicon nitride film using a high density plasma CVD apparatus, after the first step. The first silicon nitride film has a film thickness of 55 nm or more. |
