发明名称 METHODS OF FORMING PATTERNS
摘要 Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.
申请公布号 KR20150075374(A) 申请公布日期 2015.07.03
申请号 KR20140186105 申请日期 2014.12.22
申请人 MICRON TECHNOLOGY, INC.;ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C.;DOW GLOBAL TECHNOLOGIES LLC 发明人 BROWN WILLIAM R.;OLSON ADAM;JAIN KAVERI;EOM, HO SEOP;CHEN XUE GLORIA;MIRIN NIK;MILLWARD DAN;TREFONAS PETER III;HUSTAD PHILLIP DENE;PARK, JONG KEUN;LEE CHRISTOPHER NAM
分类号 H01L21/033;H01L21/027 主分类号 H01L21/033
代理机构 代理人
主权项
地址