RESIN FILM FOR SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

The purpose of the present invention is to provide a resin film for a semiconductor device having enough ion capture properties after a heat history, and a manufacturing method of a semiconductor device using the resin film for the semiconductor device. The present invention relates to the resin film for the semiconductor device wherein a ratio B/A of a copper ion capture rate A before heat curing and a copper ion capture rate B after heat curing is more than or equal to 1.