FAST SIC EPITAXY GROWTH

摘要

The present invention relates to a SiC substrate having an epitaxial layer formed thereon, wherein the SiC substrate includes: a SiC substrate; and a SiC epitaxial layer formed on the substrate. A thickness of the epitaxial layer is uniform even at a high epitaxial growing speed, and the epitaxial layer with controlled generation of Si droplet is formed on the substrate.