ION IMPLANTATION SIMULATION SYSTEM AND ION IMPLANTATION SIMULATION METHOD

摘要

PROBLEM TO BE SOLVED: To provide an ion implantation simulation system for reducing statistic noise in the distribution of an impurity concentration of a device in a numerical simulation result.SOLUTION: The ion implantation simulation system includes: a dispersion calculation unit for performing the dispersion calculation of Monte Carlo particles in a solid subjected to ion implantation and divided into a plurality of blocks; a check point detection unit for detecting a check point from the number of times of collision, outputted by the dispersion calculation unit, for the solid to a target particle; a duplicate generation unit for generating a duplicate of the Monte Carlo particle on the basis of a particle concentration indicating the number of particles per unit volume of the Monte Carlo particles stopped in the block that becomes the check point; and an impurity concentration calculation unit for calculating the impurity concentration in the block using a weight coefficient of the impurity concentration to be added to each of the Monte Carlo particles during duplication.