发明名称 Extreme Ultraviolet Light Source
摘要 A first remaining plasma that at least partially coincides with a target region is formed; a target including target material in a first spatial distribution to the target region is provided, the target material including material that emits EUV light when converted to plasma; the first remaining plasma and the initial target interact, the interaction rearranging the target material from the first spatial distribution to a shaped target distribution to form a shaped target in the target region, the shaped target including the target material arranged in the shaped spatial distribution; an amplified light beam is directed toward the target region to convert at least some of the target material in the shaped target to a plasma that emits EUV light; and a second remaining plasma is formed in the target region.
申请公布号 US2015189728(A1) 申请公布日期 2015.07.02
申请号 US201414563496 申请日期 2014.12.08
申请人 ASML Netherlands B.V. 发明人 Tao Yezheng;Stewart, IV John Tom;Brown Daniel J.W.
分类号 H05G2/00 主分类号 H05G2/00
代理机构 代理人
主权项 1. A method of forming a shaped target for an extreme ultraviolet light source, the method comprising: forming a first remaining plasma that at least partially coincides with a target region; providing a target comprising target material in a first spatial distribution to the target region, the target material comprising material that emits EUV light when converted to plasma; allowing the first remaining plasma and the initial target to interact, the interaction rearranging the target material from the first spatial distribution to a shaped target distribution to form a shaped target in the target region, the shaped target comprising the target material arranged in the shaped spatial distribution; directing an amplified light beam toward the target region to convert at least some of the target material in the shaped target to a plasma that emits EUV light, the amplified light beam having an energy sufficient to convert the target material in the shaped target to plasma that emits EUV light; and allowing a second remaining plasma to form in the target region.
地址 Veldhoven NL