发明名称 |
Extreme Ultraviolet Light Source |
摘要 |
A first remaining plasma that at least partially coincides with a target region is formed; a target including target material in a first spatial distribution to the target region is provided, the target material including material that emits EUV light when converted to plasma; the first remaining plasma and the initial target interact, the interaction rearranging the target material from the first spatial distribution to a shaped target distribution to form a shaped target in the target region, the shaped target including the target material arranged in the shaped spatial distribution; an amplified light beam is directed toward the target region to convert at least some of the target material in the shaped target to a plasma that emits EUV light; and a second remaining plasma is formed in the target region. |
申请公布号 |
US2015189728(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
US201414563496 |
申请日期 |
2014.12.08 |
申请人 |
ASML Netherlands B.V. |
发明人 |
Tao Yezheng;Stewart, IV John Tom;Brown Daniel J.W. |
分类号 |
H05G2/00 |
主分类号 |
H05G2/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a shaped target for an extreme ultraviolet light source, the method comprising:
forming a first remaining plasma that at least partially coincides with a target region; providing a target comprising target material in a first spatial distribution to the target region, the target material comprising material that emits EUV light when converted to plasma; allowing the first remaining plasma and the initial target to interact, the interaction rearranging the target material from the first spatial distribution to a shaped target distribution to form a shaped target in the target region, the shaped target comprising the target material arranged in the shaped spatial distribution; directing an amplified light beam toward the target region to convert at least some of the target material in the shaped target to a plasma that emits EUV light, the amplified light beam having an energy sufficient to convert the target material in the shaped target to plasma that emits EUV light; and allowing a second remaining plasma to form in the target region. |
地址 |
Veldhoven NL |