TRANSISTOR WITH IMPROVED RADIATION HARDNESS

摘要

An integrated circuit and method with a radiation hard transistor where the gate of the radiation hard transistor does not cross the boundary between active and isolation.

主权项

1. An integrated circuit, comprising:
a radiation hard MOS transistor, the radiation hard transistor further comprising: an active region in a substrate of the integrated circuit wherein the active region is surrounded by isolation dielectric; a radiation hard transistor gate on the active region wherein the radiation hard transistor gate does not cross a boundary between the active region and the isolation dielectric; a first portion of the radiation hard transistor gate over a first gate dielectric wherein the first gate dielectric overlies active adjacent to a channel of the radiation hard transistor; a second portion of the radiation hard transistor gate over a second gate dielectric and wherein the second gate dielectric overlies the channel; a source diffusion and a drain diffusion that is implanted self-aligned to the second portion; and silicide formed on a portion of the source diffusion and on a portion of the drain diffusion wherein the silicide does not short pn-junctions formed between the source diffusion and the drain diffusions and the substrate.