TRANSISTOR AND METHOD FOR FORMING THE SAME

摘要

Various embodiments provide transistors and methods for forming the same. In an exemplary method, a substrate can be provided. A gate structure can be formed on the substrate. A stress layer can be formed in the substrate on both sides of the gate structure. Barrier ions can be doped in the stress layer to form a barrier layer in the stress layer. The barrier layer can have a preset distance from a surface of the stress layer. An electrical contact layer can be formed using a portion of the stress layer on the barrier layer by a salicide process. The electrical contact layer can contain a first metal element. The first metal element can have a resistivity lower than a resistivity of a silicidation metal. The barrier layer can prevent atoms of the first metal element from diffusing to a bottom of the stress layer.

主权项

1. A method for forming a transistor, comprising:
providing a substrate; forming a gate structure on the substrate; forming a stress layer in the substrate on both sides of the gate structure; doping barrier ions in the stress layer to form a barrier layer in the stress layer, wherein the barrier layer has a preset distance from a surface of the stress layer; and forming an electrical contact layer using a portion of the stress layer on the barrier layer by a salicide process, the electrical contact layer containing a first metal element, the first metal element having a resistivity lower than a resistivity of a silicidation metal, wherein the barrier layer prevents atoms of the first metal element from diffusing to a bottom of the stress layer.