| 发明名称 |
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
Embodiments for forming a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a gate stack structure formed on the substrate. The semiconductor device structure also includes gate spacers formed on sidewalls of the gate stack structure. The semiconductor device structure further includes an isolation structure formed in the substrate and a source/drain stressor structure formed adjacent to the isolation structure. The source/drain stressor structure includes a capping layer which is formed along the (311) and (111) crystal orientations. |
| 申请公布号 |
US2015187940(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201314142396 |
申请日期 |
2013.12.27 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
HUANG Shin-Yeh;CHANG Kai-Hsiang;JIANG Chih-Chen;PENG Yi-Wei;LIN Kuan-Yu;TSAI Ming-Shan;LAI Ching-Lun |
| 分类号 |
H01L29/78;H01L29/10;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device structure, comprising:
a substrate; a gate stack structure formed on the substrate; gate spacers formed on sidewalls of the gate stack structure; an isolation structure formed in the substrate; and a source/drain stressor structure formed adjacent to the isolation structure, wherein the source/drain stressor structure comprises a capping layer which is formed along the (311) and (111) crystal orientations. |
| 地址 |
Hsin-Chu TW |
