发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor device includes: a first n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate including a current carrying region and termination regions positioned at both sides of the current carrying region; a p type epitaxial layer disposed on the first n− type epitaxial layer; a second n− type epitaxial layer disposed on the p type epitaxial layer; a first trench disposed in the current carrying region; a second trench disposed in each termination region; a gate insulating layer disposed in the first trench; a gate electrode disposed on the gate insulating layer; and a termination insulating layer disposed in the second trench, in which a side of the termination insulating layer contacts the p type epitaxial layer and the second n− type epitaxial layer. |
申请公布号 |
US2015187929(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
US201414317426 |
申请日期 |
2014.06.27 |
申请人 |
HYUNDAI MOTOR COMPANY |
发明人 |
Chun Dae Hwan;Hong Kyoung-Kook;Lee Jong Seok;Park Junghee;Jung Youngkyun |
分类号 |
H01L29/78;H01L29/423;H01L29/16;H01L29/66;H01L29/06 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a first n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate including a current carrying region and termination regions positioned at both sides of the current carrying region; a p type epitaxial layer disposed on the first n− type epitaxial layer; a second n− type epitaxial layer disposed on the p type epitaxial layer; a first trench disposed in the current carrying region; a second trench disposed in each termination region; a gate insulating layer disposed in the first trench; a gate electrode disposed on the gate insulating layer; and a termination insulating layer disposed in the second trench, wherein a side of the termination insulating layer contacts the p type epitaxial layer and the second n− type epitaxial layer. |
地址 |
SEOUL KR |