| 发明名称 |
POWER SEMICONDUCTOR DEVICE |
| 摘要 |
A power semiconductor device may include: a semiconductor laminate formed by stacking a plurality of semiconductor layers each having an emitter metal layer formed on a top thereof and a collector metal layer formed on a bottom thereof; an insulating layer interposed between the semiconductor layers; and a first external electrode and a second external electrode formed on sides of the semiconductor laminate. The first external electrode is electrically connected to the emitter metal layer, and the second external electrode is electrically connected to the collector metal layer. |
| 申请公布号 |
US2015187918(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201414281365 |
申请日期 |
2014.05.19 |
| 申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
PARK Jae Hoon;HAN Kyung Joon;SONG In Hyuk;JANG Chang Su |
| 分类号 |
H01L29/739;H01L27/082 |
主分类号 |
H01L29/739 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power semiconductor device, comprising:
a semiconductor laminate including a plurality of semiconductor layers each having an emitter metal layer disposed on a top thereof and a collector metal layer disposed on a bottom thereof; an insulating layer interposed between the semiconductor layers; and a first external electrode and a second external electrode disposed on sides of the semiconductor laminate, wherein the first external electrode is electrically connected to the emitter metal layer, and the second external electrode is electrically connected to the collector metal layer. |
| 地址 |
Suwon-Si KR |
