CONTACT RESISTANCE REDUCTION IN FINFETS

摘要

A semiconductor device having fin transistors includes a plurality of substantially parallel semiconductor fins formed over a substrate and a gate structure formed over the fins transversely to a longitudinal axis of the fins. Source and drain regions are formed on opposite sides of the gate structure and are merged with the fins by an epitaxially grown crystalline material between the fins in merged regions. Interface layers are formed on the fins in regions disposed apart from both sides of the gate structure. The interface layers are formed over a top and at least a portion of opposing sides of the fins. Contact lines are formed over the interface layers such that contact is made at the top surface of the interface layer on the fins and at least a portion of the sides of the interface layer on the fins.

主权项

1. A semiconductor device having fin transistors, comprising:
a plurality of substantially parallel semiconductor fins formed over a substrate; a gate structure formed over the fins transversely to a longitudinal axis of the fins; source and drain regions formed on opposite sides of the gate structure and being merged with the fins by an epitaxially grown crystalline material between the fins in merged regions; interface layers formed on the fins in regions disposed apart from both sides of the gate structure, the interface layer being formed over a top and at least a portion of opposing sides of the fins; and contact lines formed over the interface layers such that contact is made at the top surface of the interface layer on the fins and at least a portion of the sides of the interface layer on the fins.