发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A display device that includes a first flexible substrate, a first bonding layer over the first flexible substrate, a first insulating film over the first bonding layer, a first element layer over the first insulating film, a second element layer over the first element layer, a second insulating film over the second element layer, a second bonding layer over the second insulating film, and a second flexible substrate over the second bonding layer is provided. The first element layer includes a pixel portion and a circuit portion. The pixel portion includes a display element and a first transistor, and the circuit portion includes a second transistor. The second element layer includes a coloring layer and a light-blocking layer. |
申请公布号 |
US2015187855(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
US201414581089 |
申请日期 |
2014.12.23 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Yamazaki Shunpei;Suzuki Kunihiko;Ohno Masakatsu;Adachi Hiroki;Idojiri Satoru;Takeshima Koichi |
分类号 |
H01L27/32;H01L29/786;H01L51/50;H01L51/00;H01L51/52 |
主分类号 |
H01L27/32 |
代理机构 |
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代理人 |
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主权项 |
1. A display device comprising:
a first flexible substrate; a first bonding layer over the first flexible substrate; a first insulating film over the first bonding layer; a first element layer over the first insulating film; a second element layer over the first element layer; a second insulating film over the second element layer; a second bonding layer over the second insulating film; and a second flexible substrate over the second bonding layer, wherein the first element layer includes a pixel portion and a circuit portion, wherein the pixel portion includes a display element and a first transistor and the circuit portion includes a second transistor, wherein the second element layer includes a coloring layer and a light-blocking layer, wherein the first transistor includes:
a first oxide semiconductor layer including a channel formation region; anda first gate electrode over the first oxide semiconductor layer, and wherein the second transistor includes:
a second oxide semiconductor layer including a channel formation region; anda second gate electrode over the second oxide semiconductor layer, the second gate electrode facing a side surface of the second oxide semiconductor layer. |
地址 |
Atsugi-shi JP |