发明名称 SEMICONDUCTOR DEVICE
摘要 A display device that includes a first flexible substrate, a first bonding layer over the first flexible substrate, a first insulating film over the first bonding layer, a first element layer over the first insulating film, a second element layer over the first element layer, a second insulating film over the second element layer, a second bonding layer over the second insulating film, and a second flexible substrate over the second bonding layer is provided. The first element layer includes a pixel portion and a circuit portion. The pixel portion includes a display element and a first transistor, and the circuit portion includes a second transistor. The second element layer includes a coloring layer and a light-blocking layer.
申请公布号 US2015187855(A1) 申请公布日期 2015.07.02
申请号 US201414581089 申请日期 2014.12.23
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei;Suzuki Kunihiko;Ohno Masakatsu;Adachi Hiroki;Idojiri Satoru;Takeshima Koichi
分类号 H01L27/32;H01L29/786;H01L51/50;H01L51/00;H01L51/52 主分类号 H01L27/32
代理机构 代理人
主权项 1. A display device comprising: a first flexible substrate; a first bonding layer over the first flexible substrate; a first insulating film over the first bonding layer; a first element layer over the first insulating film; a second element layer over the first element layer; a second insulating film over the second element layer; a second bonding layer over the second insulating film; and a second flexible substrate over the second bonding layer, wherein the first element layer includes a pixel portion and a circuit portion, wherein the pixel portion includes a display element and a first transistor and the circuit portion includes a second transistor, wherein the second element layer includes a coloring layer and a light-blocking layer, wherein the first transistor includes: a first oxide semiconductor layer including a channel formation region; anda first gate electrode over the first oxide semiconductor layer, and wherein the second transistor includes: a second oxide semiconductor layer including a channel formation region; anda second gate electrode over the second oxide semiconductor layer, the second gate electrode facing a side surface of the second oxide semiconductor layer.
地址 Atsugi-shi JP