| 发明名称 |
THIN FILM TRANSISTOR ARRAY PANEL |
| 摘要 |
A thin film transistor array panel includes an insulation substrate; a gate line and a first electrode on the insulation substrate; a gate insulating layer on the gate line and the first electrode; a data line on the gate insulating layer; a passivation layer on the gate insulating layer and the data line; and a second electrode on the passivation layer. Relative permittivity (ε) of the gate insulating layer is more than about 15, and a thickness of the gate insulating layer is about 2000 angstroms. |
| 申请公布号 |
US2015187811(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201414585336 |
申请日期 |
2014.12.30 |
| 申请人 |
Samsung Display Co., Ltd. |
发明人 |
INOUE Daisuke;KIM Mi Suk;KIM Si Heun;KIM Tae Ho;PARK So Youn;OH Keun Chan;LEE Chang-Hun |
| 分类号 |
H01L27/12;H01L29/51;H01L29/417;H01L29/49 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor array panel comprising:
an insulation substrate comprising a pixel area; a gate line and a first electrode on the insulation substrate; a gate insulating layer on the gate line and the first electrode; a data line on the gate insulating layer; a passivation layer on the gate insulating layer and the data line; and a second electrode on the passivation layer, wherein relative permittivity (ε) of the gate insulating layer is more than about 15, and a thickness of the gate insulating layer is about 2000 angstroms. |
| 地址 |
Yongin-City KR |
