发明名称 |
EPITAXIAL GROWTH APPARATUS |
摘要 |
Disclosed herein is an epitaxial growth apparatus for growing an epitaxial layer on a surface of a wafer. The apparatus includes: a chamber in which the wafer is housed; an upper lamp group that includes a plurality of heating lamps arranged in a ring above the chamber; a lower lamp group that includes a plurality of heating lamps provided below the chamber; a reflection member that is provided inside the ring of the upper lamp group, the reflection member having a substantially cylindrical shape; and an additional reflection member that is provided inside the reflection member, the additional reflection member including a reflection surface that is substantially parallel to the surface of the wafer. The additional reflection member is provided in such a way as to close at least part of an opening of a lower end portion of the reflection member. |
申请公布号 |
US2015184313(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
US201414582566 |
申请日期 |
2014.12.24 |
申请人 |
Sumco Corporation |
发明人 |
YOSHITAKE Kan;OKAMOTO Kimitaka;SHOJI Haruki |
分类号 |
C30B25/10;C30B25/08 |
主分类号 |
C30B25/10 |
代理机构 |
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代理人 |
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主权项 |
1. An epitaxial growth apparatus for growing an epitaxial layer on a surface of a wafer, the apparatus comprising:
a chamber in which the wafer is housed; an upper lamp group that includes a plurality of heating lamps arranged in a ring above the chamber; a lower lamp group that includes a plurality of heating lamps provided below the chamber; a reflection member that is provided inside the ring of the upper lamp group, the reflection member having a substantially cylindrical shape; and an additional reflection member that is provided inside the reflection member, the additional reflection member including a reflection surface that is substantially parallel to the surface of the wafer, wherein the additional reflection member is provided in such a way as to close at least part of an opening of a lower end portion of the reflection member. |
地址 |
Tokyo JP |