发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
Disclosed is a semiconductor device having a first transistor and a second transistor over the first transistor. The first transistor includes a first semiconductor, and the second transistor includes an oxide semiconductor that is different from the first semiconductor. A gate of the first transistor is electrically connected to a source or drain electrode of the second transistor. The second transistor has a semiconductor layer including the oxide semiconductor over the source and drain electrodes and a gate electrode over the semiconductor layer with an insulating layer therebetween. |
申请公布号 |
WO2015097596(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
WO2014IB66993 |
申请日期 |
2014.12.17 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;ANDO, YOSHINORI |
分类号 |
H01L21/8234;G09F9/30;H01L21/28;H01L21/336;H01L21/822;H01L21/8242;H01L21/8247;H01L27/04;H01L27/06;H01L27/088;H01L27/108;H01L27/115;H01L29/786;H01L29/788;H01L29/792;H01L51/50;H05B33/14 |
主分类号 |
H01L21/8234 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|