| 发明名称 |
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
Embodiments of a method for forming a semiconductor device structure are provided. The method includes forming a gate stack over a semiconductor substrate and forming a sealing structure over a sidewall of the gate stack. The method also includes forming a dummy shielding layer over the semiconductor substrate, the sealing structure, and the gate stack. The method further includes performing an ion implantation process on the dummy shielding layer to form source and drain regions in the semiconductor substrate. In addition, the method includes removing the dummy shielding layer after the source and drain regions are formed. |
| 申请公布号 |
US2015187904(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201314143789 |
申请日期 |
2013.12.30 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd |
发明人 |
CHANG Che-Cheng;CHEN Yi-Jen;CHANG Yung-Jung |
| 分类号 |
H01L29/66;H01L29/78;H01L21/265 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor device structure, comprising:
forming a gate stack over a semiconductor substrate; forming a sealing structure over a sidewall of the gate stack; forming a dummy shielding layer over the semiconductor substrate, the sealing structure, and the gate stack; performing an ion implantation process on the dummy shielding layer to form source and drain regions in the semiconductor substrate; and removing the dummy shielding layer after the source and drain regions are formed. |
| 地址 |
Hsin-Chu TW |
