DATA STORING METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE APPARATUS

摘要

A data storing method for storing data in a rewritable non-volatile memory module is provided. The method includes temporarily storing first data into a buffer memory; and starting a flush operation to write the first data from the buffer memory into a first physical programming unit. The method further includes determining whether the first physical programming unit is a lower physical programming unit; and if yes, writing second data into a second physical programming unit, wherein the second physical programming unit belongs to an upper physical programming unit, and the second physical programming unit and the first physical programming unit are formed by the same memory cells disposed on the same word line. Accordingly, the method can effectively prevent the data written during the flush operation from losing due to the programming fail occurred on other physical programming units.

主权项

1. A data storing method for storing data in a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module has a plurality of physical erasing units, each of physical erasing units has a plurality of physical programming units comprising a plurality of lower physical programming units and a plurality of upper physical programming units, and the data storing method comprises:
temporarily storing first data into a buffer memory; starting a flush operation to write the first data from the buffer memory into a first physical programming unit of a first physical erasing unit among the physical erasing units; after writing the first data into the first physical programming unit of the first physical erasing unit, determining whether the first physical programming unit of the first physical erasing unit is one of the lower physical programming units; and if the first physical programming unit of the first physical erasing unit is one of the lower physical programming units, writing second data into a second physical programming unit of the first physical erasing unit, wherein the second physical programming unit of the first physical erasing unit belongs to one of the upper physical programming units, and the second physical programming unit of the first physical erasing unit and the first physical programming unit of the first physical erasing unit are formed by a plurality of memory cells disposed on a first word line.