METAL-DOPED GERMANIUM TELLURIDE-BASED RESISTIVE SWITCHING MEMORY MATERIAL, PREPARATION METHOD, AND RESISTIVE SWITCHING UNIT COMPONENT

摘要

Provided in embodiments of the present invention is a metal-doped germanium telluride-based resistive switching memory material, which has a molecular formula of MxGeyTez, where 0 < x ≤ 20, 35 ≤ y ≤ 55, z = 100 − x − y, and M is either Ag, Al, Au, Ti, W, Ta, Fe or Mn. The doping of metal M increases the crystallization temperature of a germanium telluride-based resistive switching memory material, thus increasing the thermal stability of the amorphous state, reducing a disturbance factor of heating to a resistive switching characteristic, solving the problem of loss or disturbance of data storage and increased energy consumption caused by low crystallization temperature of an existing germanium telluride material, and providing increased practical application value. Also provided in the embodiments of the present invention is a preparation method for the metal-doped germanium telluride-based resistive switching memory material. The preparation method has a flexible operation and a wide range of applications. Also provided in the embodiments of the present invention is a resistive switching unit component comprising the metal-doped germanium telluride-based resistive switching memory material.